MCT2200.300 查看數據表（PDF） - Fairchild Semiconductor

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MCT2200.300

PHOTOTRANSISTOR OPTOCOUPLERS

Fairchild Semiconductor 

PHOTOTRANSISTOR OPTOCOUPLERS

MCT2

MCT2200

MCT2E

MCT2201

MCT210

MCT2202

MCT271

ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)

Individual Component Characteristics

Parameter

Test Conditions Symbol Device

Min

EMITTER

Input Forward Voltage

(IF = 20 mA)

MCT2/-M

MCT2E/-M

MCT271

VF

MCT2200

MCT2201

MCT2202

Reverse Leakage Current

(TA = 0-70°C, IF = 40 mA)

MCT210

MCT2/-M

MCT2E/-M

(VR = 3.0 V)

IR

MCT271

MCT2200

MCT2201

MCT2202

(TA = 0-70°C, VR = 6.0 V)

MCT210

DETECTOR

Collector-Emitter BreakdownVoltage

(IC = 1.0 mA, IF = 0)

(TA = 0-70°C)

BVCEO

ALL

MCT210

30

MCT2/-M

MCT2E/-M

Collector-Base Breakdown Voltage

(IC = 10 µA, IF = 0) BVCBO

MCT271

MCT2200

70

MCT2201

MCT2202

Emitter-Collector Breakdown Voltage

(TA = 0-70°C)

MCT210

30

MCT2/-M

MCT2E/-M

(IE = 100 µA, IF = 0) BVECO

MCT271

MCT2200

7

MCT2201

MCT2202

Collector-Emitter Dark Current

Collector-Base Dark Current

Capacitance

(TA = 0-70°C)

MCT210

6

(VCE = 10 V, IF = 0)

(VCE = 5 V, TA = 0-70°C)

ICEO

ALL

(VCB = 10 V, IF = 0) ICBO

ALL

(VCE = 0 V, f = 1 MHz) CCE

ALL

** Typical values at TA = 25°C

Typ**

1.25

1.33

0.001

100

120

10

10

1

8

Max Unit

1.50 V

10 µA

V

V

V

50 nA

30 µA

20 nA

pF

© 2005 Fairchild Semiconductor Corporation

Page 3 of 15

6/15/05

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