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MDC5100 查看數據表(PDF) - ON Semiconductor

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MDC5100
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MDC5100 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MDC5100
ELECTRICAL CHARACTERISTICS (VCC = 2.75 V, VEE = –10 V, TA = 25°C)
Characteristic
Symbol
Min
Typ
Max
Unit
RECOMMENDED OPERATING CONDITIONS
Positive Supply Voltage
Negative Supply Voltage
Voltage Range at Any Input Pin (TxE, RxE, Acc)
Ambient Operating Temperature Range
DC ELECTRICAL CHARACTERISTICS
VCC
1.8
VEE
–10
Vin
0
TA
–40
5.0
V
–5.0
V
VCC
V
85
°C
Positive Supply Current (Acc connected to GND)
Negative Supply Current (Acc, V1, V2 unterminated)
ICC
100
400
500
mA
IEE
–200
RxE or TxE Input High State for V1 or V2 = V+
RxE or TxE Input Low State for V1 or V2 = V–
V1, V2 Output High State – TxE or RxE = VIH, IOH = –25 mA (1)
V1, V2 Output Low State – TxE or RxE = VIL, IOL = 25 mA (1)
VIH
2.65
VIL
V+
2.50
V–
V
0.4
V
–5.75
Accessory Resistance for V1 = V–, V2 = V+ (TxE = VIH, RxE = VIL)
Racc
800
Accessory Resistance for V1 = V+, V2 = V– (TxE = VIH, RxE = VIL)
Racc
kW
12
AC ELECTRICAL CHARACTERISTICS
Propagation Delay – RxE/TxE to V1/V2 (Racc = 800 kW to GND)
TPLH (2)
TPHL (2)
0.016
0.004
0.5
msec
1.4
msec
Propagation Delay – RxE/TxE to V1/V2 (Racc = 12 kW to GND)
TPLH
TPHL
0.35
0.005
4.0
msec
1.4
msec
Propagation Delay – Acc to V1/V2 through 12 kW
TPLH
0.4
TPHL
0.1
Transition Time of V1/V2 from RxE or TxE (Racc = 800 k to GND)
Trise (3)
0.3
Tfall (3)
0.3
7.5
msec
5.0
msec
7.4
msec
4.4
msec
Transition Time of V1/V2 from RxE or TxE (Racc = 12 k to GND)
Trise
0.3
Tfall
0.2
16
msec
4.0
msec
Transition Time of V1/V2 from Acc Input
Trise
0.3
Tfall
0.3
4.1
msec
4.1
msec
NOTES: 1 Refer to truth table for input test states
2. TPLH and TPHL are measured from the 50% point of input waveform to 50% of the output waveform
3. Trise and Tfall are measured from the 10% point to the 90% point of the output
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