MF1011B900 查看數據表（PDF） - Philips Electronics
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MF1011B900 Datasheet PDF : 12 Pages
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Philips Semiconductors
Microwave power transistor
Product specification
MF1011B900Y
FEATURES
• Suitable for short and medium
pulse applications up to 100 µs
pulse width, duty factor 10%
• Diffused emitter ballasting resistors
improve ruggedness
• Interdigitated emitter-base
structure provides high emitter
efficiency
• Gold metallization with barrier
realizes very stable characteristics
and excellent lifetime
• Multicell geometry improves power
sharing and reduces thermal
resistance
• Internal input and output
prematching networks allow an
easier design of circuits.
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common-base class C
narrowband amplifier.
MODE OF
OPERATION
CONDITIONS
f
(GHz)
VCC
(V)
PL
(W)
Gp
(dB)
ηC
(%)
Class C
tp = 10 µs;
δ = 1%
1.09 50 800 ≥6 ≥40
PINNING - SOT448A
PIN
DESCRIPTION
1
collector
2
emitter
3
base connected to flange
APPLICATIONS
Intended for use in common base
handbook, 4 columns
1
class C broadband pulsed power
amplifiers for IFF, TCAS and Mode S
applications in the
1030 MHz to 1090 MHz band. Also
3
suitable for medium pulse, heavy duty
operation within this band.
2
Top view
c
b
3
e
MAM045
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT448A glued cap metal ceramic
flange package, with base connected
to flange.
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2
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