MF1011B900 查看數據表（PDF） - Philips Electronics

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MF1011B900

Microwave power transistor

Philips Electronics 

Philips Semiconductors

Microwave power transistor

Product specification

MF1011B900Y

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCES

VCEO

VEBO

ICM

Ptot

Tstg

Tj

Tsld

collector-base voltage

collector-emitter voltage

collector-emitter voltage

emitter-base voltage

peak collector current

total power dissipation

storage temperature

junction temperature

soldering temperature

open emitter

RBE = 0

open base

open collector

tp = 10 µs; δ = 1%

Tmb < 75 °C; tp ≤ 10 µs; δ ≤ 1%

t ≤ 10 s; note 1

Note

1. Up to 0.2 mm from ceramic.

MIN.

−

−

−

−

−

−

−65

−

−

MAX. UNIT

65

V

65

V

15

V

3

V

50

A

1750 W

+200 °C

200 °C

235 °C

1800

handbook, halfpage

P tot

(W)

1200

MLC721

600

0

50

0

50

100

150

200

Tmb (oC)

tp = 10 µs; δ = 1%.

Fig.2 Power derating curve.

1997 Feb 18

3

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