MF365A-LCDATXX 查看數據表（PDF） - Mitsumi
零件编号
产品描述 (功能)
生产厂家
MF365A-LCDATXX Datasheet PDF : 11 Pages
| |||
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
CAPACITANCE
Symbol
Parameter
Test conditions
CI Input capacitance VI=GND, VI=25mVrms
f=1 MHZ, Ta=25°C
CO Output capacitance VO=GND, VO=25mVrms,
f=1 MHZ, Ta=25°C
Note 4 : These parameters are not 100% tested.
64KB~2MB
4MB
64KB~2MB
4MB
Limits
Min. T y p . Max. Unit
45 pF
30
45 pF
20
SWITCHING CHARACTERISTICS
Read Cycle (LC series Ta= 0~55°C, VCC=4.50~5.25V, unless otherwise noted)
(LS series Ta=-20~70°C, VCC=4.50~5.25V, unless otherwise noted)
Symbol
Parameter
Limits
Min.
Typ.
Max.
Unit
tCR
Read cycle time
200
ns
ta(A)
Address access time
200
ns
ta(CE) Card enable access time
200
ns
ta(OE) Output enable accese time
100
ns
tdis(CE) Output disable time (from CE#)
90
ns
tdis(OE) Output disable time (from OE#)
90
ns
ten(CE) Output enable time (from CE#)
5
ns
ten(OE) Output enable time (from OE#)
5
ns
tV(A)
Data valid time (after address change)
0
ns
TIMING REQUIREMENTS
Write Cycle(LC series Ta= 0~55°C, VCC=4.50~5.25V, unless otherwise noted)
(LS series Ta=-20~70°C, VCC=4.50~5.25V, unless otherwise noted)
Symbol
tCW
tw(WE)
tsu(A)
tsu(A-WEH)
tsu(CE-WEH)
tsu(D-WEH)
th(D)
trec(WE)
tdis(WE)
tdis(OE)
ten(WE)
ten(OE)
tsu(OE-WE)
th(OE-WE)
Parameter
Write cycle time
Write pulse width
Address set up time
Address set up time with respect to WE# high
Card enable set up time with respect to WE# high
Data set up time with respect to WE# high
Data hold time
Write recovery time
Output disable time (from WE#)
Output disable time (from OE#)
Output enable time (from WE#)
Output enable time (from OE#)
OE# set up time with respect to WE# low
OE# hold time with respect to WE# high
Min.
200
120
20
140
140
60
30
30
5
5
10
10
Limits
Typ.
Max.
90
90
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
MITSUBISHI
ELECTRIC
6/11
Share Link: 