MGA-545P8 查看數據表（PDF） - HP => Agilent Technologies
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MGA-545P8 Datasheet PDF : 10 Pages
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155
145
135
125
115
105
95
85
75
0
2.7 V
3.0 V
3.3 V
4.0 V
2 4 6 8 10 12 14
Pin (dBm)
Figure 12. Device current vs. Pin and
voltage[4,5].
150
140
130
120
110
–40°C
25°C
85°C
100
2.4 2.7 3.0 3.3 3.6 3.9 4.2
VOLTAGE (V)
Figure 13. Id vs. voltage and temperature (no
RF drive).
110
100
90
80
–40°C
25°C
85°C
70
2.4 2.7 3.0 3.3 3.6 3.9 4.2
VOLTAGE (V)
Figure 14. Saturated Id vs. voltage and
temperature[3,4].
12
2.7 V
10
3.0 V
3.3 V
4.0 V
8
6
4
2
0
-10 -5
0 5 10 15 20
Pout (dBm)
Figure 15. EVM(64QAM) vs. Pout and voltage
at 5.725 GHz[4].
10
9
2.7 V
8
3.0 V
7
3.3 V
4.0 V
6
5
4
3
2
1
0
-20 -15 -10 -5 0
Pin (dBm)
5 10
Figure 16. EVM(64QAM) vs. Pin and voltage at
5.725 GHz[4].
Notes:
1. Measurement was done in a 50 Ω microstrip line with input and output tuned for maximum gain using double stub-tuners.
2. Measurement was done in a 50 Ω microstrip line with input tuned for gain and output tuned for maximum Psat using double-stub tuners.
3. Measured at 2.5 dB gain compression.
4. Measurement at 5.825 GHz were made on a fixed tuned demo board that was tuned for maximum saturated output power and maximum gain.
5. Circuit losses have been de-embedded from actual measurement.
5
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