ZSR600G(2006) 查看數據表（PDF） - Zetex => Diodes
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ZSR600G Datasheet PDF : 17 Pages
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ZSR SERIES
ZSR400 TEST CONDITIONS (Unless otherwise stated):Tj=25°C, IO=100mA, Vin=8V
SYMBOL PARAMETER
VO
Output Voltage
∆VO Line Regulation
∆VO Load Regulation
lq
Quiescent Current
∆lq Quiescent Current
Change
Vn
Output Noise Voltage
∆Vin /∆VO Ripple Rejection
Vin
Input Voltage Required
To Maintain Regulation
CONDITIONS MIN.
3.9
IO=1 to 200mA τ 3.84
Vin=6 to 20V
3.84
IO=1 to 100mA τ
V =6 to 20V
in
I =1 to 200mA
I
O
O
=1
to
100mA
τ
IO=1 to 200mA
Vin=6 to 20V
f=10Hz to 10kHz
Vin=7 to 18V
48
f=120Hz
6
TYP.
4.0
10
5
2
350
75
62
5.3
MAX.
4.1
4.16
4.16
UNITS
V
V
V
40
mV
25
mV
mV
600
µA
100
µA
100
µA
µV rms
dB
V
ZSR485 TEST CONDITIONS (Unless otherwise stated): Tj=25°C, IO=100mA, Vin=8.85V
SYMBOL PARAMETER
VO
Output Voltage
∆VO Line Regulation
∆VO Load Regulation
lq
Quiescent Current
∆lq Quiescent Current
Change
Vn
Output Noise Voltage
∆Vin /∆VO Ripple Rejection
Vin
∆VO /∆T
Input Voltage Required
To Maintain Regulation
Average Temperature
Coefficient of VO
CONDITIONS MIN.
4.729
IO=1 to 200mA τ 4.656
Vin=6.8 to 20V
4.656
IO=1 to 100mA τ
V =6.85 to 20V
in
I =1 to 200mA
I
O
O
=1
to
100mA
τ
IO=1 to 200mA
Vin=6.85 to 20V
f=10Hz to 10kHz
Vin=7.85 to 18V 50
f=120Hz
6.85
IO=5.0mA τ
TYP.
4.85
10
5
2
350
50
64
6.55
0.1
MAX.
4.971
5.044
5.044
UNITS
V
V
V
40
mV
25
mV
mV
600
µA
100
µA
100
µA
µV rms
dB
V
mV/°C
=Tj = -55 to 125°C
SEMICONDUCTORS
4
Issue 8 - April 2006
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