CHA2066-99F/00(2001) 查看數據表（PDF） - United Monolithic Semiconductors
零件编号
产品描述 (功能)
生产厂家
CHA2066-99F/00 Datasheet PDF : 8 Pages
| |||
CHA2066
10-16GHz Low Noise Amplifier
Electrical Characteristics
Tamb = +25°C, Vd = +4V
Symbol
Parameter
Fop Operating frequency range
Test
Condi
Min
tions
10
G
Gain (1)
14
∆G
Gain flatness (1)
NF Noise figure (1)
VSWRin Input VSWR (1)
VSWRout Ouput VSWR ( 11 to 16 GHz ) (1)
IP3
P1dB
Id
3rd order intercept point
Output power at 1dB gain
compression
Drain bias current (2)
Typ Max
16
16
± 0.5 ± 1.0
2.0 2.5
3.0:1
3.0:1
20
10
45
Unit
Ghz
dB
dB
dB
dBm
dBm
mA
(1) These values are representative of on-wafer measurements that are made without bonding wires
at the RF ports. When the chip is attached with typical 0.3nH input and output bonding wires, the
indicated parameter values should be improved.
(2) This current is the typical value from the low noise low consumption biasing ( B & D grounded ).
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Parameter (1)
Values
Unit
Vd
Drain bias voltage (3)
4.5
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Top Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Duration < 1s.
(3) For a typical biasing circuit : B & D grounded. See chip biasing option page 7/8.
Ref. : DSCHA20661257 -14-Sept-01
2/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Share Link: 