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CHA2066-99F/00(2001) 查看數據表(PDF) - United Monolithic Semiconductors

零件编号
产品描述 (功能)
生产厂家
CHA2066-99F/00
(Rev.:2001)
UMS
United Monolithic Semiconductors UMS
CHA2066-99F/00 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
10-16GHz Low Noise Amplifier
Typical Chip Assembly
IN
C = 100pF
CHA2066
Vd
BE
OUT
Chip Biasing options
This chip is self-biased, and flexibility is provided by the access to number of pads. the
internal DC electrical schematic is given in order to use these pads in a safe way.
The two requirements are :
N°1 : Not exceed Vds = 3.5Volt ( internal Drain to Source voltage ).
N°2 : Not biased in such a way that Vgs becomes positive.
( internal Gate to Source voltage )
We propose two standard biasing :
Low Noise and low consumption :
Vd = 4V and B & D grounded.
All the other pads non connected ( NC ).
Idd = 45mA & Pout-1dB = +10dBm Typical.
( Equivalent to A,B,C,D,E : NC and Vd=4V ; G1=+1.4V ; G2=+1.4V).
Low Noise and high output power :
Vd = 4V and B & E grounded.
All the other pads non connected ( NC ).
Idd = 55mA & Pout-1dB = +13dBm Typical.
( Equivalent to A,B,C,D,E : NC and Vd=5V ; G1=+1.4V ; G2=+4.0V).
A file is available on request to help the biasing option tuning.
Ref. : DSCHA20661257 -14-Sept-01
7/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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