IXDP20N60BD1 查看數據表（PDF） - IXYS CORPORATION
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IXDP20N60BD1 Datasheet PDF : 4 Pages
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IXDP 20N60 B
IXDP 20N60 BD1
Symbol
Cies
C
oes
Cres
Qg
td(on)
tr
td(off)
tf
Eon
Eoff
RthJC
RthCH
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V = 25 V, V = 0 V, f = 1 MHz
CE
GE
800
pF
85
pF
50
pF
IC = 20 A, VGE = 15 V, VCE = 480 V
Inductive load, TJ = 125°C
IC = 20 A, VGE = ±15 V,
V
CE
=
300
V,
R
G
=
22
W
70
nC
25
ns
30
ns
260
ns
55
ns
0.9
mJ
0.4
mJ
Package with heatsink compound
0.5
0.9 K/W
K/W
Reverse Diode (FRED) [D1 version only]
Symbol
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IF = 20 A, VGE = 0 V
IF = 20 A, VGE = 0 V, TJ = 125°C
2.1 2.4 V
1.6
V
IF
TC = 25°C
TC = 90°C
25 A
15 A
IRM
trr
trr
RthJC
IF = 10 A, -diF/dt = 400 A/µs, VR = 300 V
VGE = 0 V, TJ = 125°C
IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V
11
A
80
ns
40
ns
2.5 K/W
TO-220 AB Outline
Dim. Millimeter
Min. Max.
A 12.70 13.97
B 14.73 16.00
C 9.91 10.66
D 3.54 4.08
E 5.85 6.85
F 2.54 3.18
G 1.15 1.65
H 2.79 5.84
J 0.64 1.01
K 2.54 BSC
M 4.32 4.82
N 1.14 1.39
Q 0.35 0.56
R 2.29 2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
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2-4
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