IXTK21N100 查看數據表（PDF） - IXYS CORPORATION

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IXTK21N100

High Voltage MegaMOS™ FETs

IXYS CORPORATION 

IXTK 21N100

IXTN 21N100

Symbol

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg(on)

Qgs

Qgd

RthJC

RthCK

RthJC

RthCK

Test Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

VDS = 10 V; ID = 0.5 • ID25, pulse test

VGS = 0 V, VDS = 25 V, f = 1 MHz

VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 1 Ω (External),

VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

TO-264 AA

TO-264 AA

miniBLOC, SOT-227 B

miniBLOC, SOT-227 B

24

S

8400

pF

630

pF

110

pF

30

ns

50

ns

100

ns

40

ns

250

nC

60

nC

100

nC

0.25 K/W

0.15

K/W

0.24 K/W

0.05

K/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

IS

VGS = 0 V

ISM

Repetitive; pulse width limited by TJM

VSD

IF = IS, VGS = 0 V,

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

21 A

84 A

1.5 V

trr

IRM

IF = IS, -di/dt = 100 A/µs, VR = 100 V

1000

ns

20

A

TO-264 AA Outline

Dim. Millimeter

Min. Max.

A 4.82 5.13

A1 2.54 2.89

A2 2.00 2.10

b 1.12 1.42

b1 2.39 2.69

b2 2.90 3.09

c

0.53 0.83

D 25.91 26.16

E 19.81 19.96

e

5.46 BSC

J

0.00 0.25

K 0.00 0.25

L 20.32 20.83

L1 2.29 2.59

P 3.17 3.66

Q 6.07 6.27

Q1 8.38 8.69

R 3.81 4.32

R1 1.78 2.29

S 6.04 6.30

T 1.57 1.83

Inches

Min. Max.

.190

.100

.079

.202

.114

.083

.044

.094

.114

.056

.106

.122

.021 .033

1.020 1.030

.780 .786

.215 BSC

.000 .010

.000 .010

.800

.090

.820

.102

.125 .144

.239

.330

.247

.342

.150

.070

.170

.090

.238 .248

.062 .072

miniBLOC, SOT-227 B

© 2000 IXYS All rights reserved

M4 screws (4x) supplied

Dim.

A

B

C

D

E

F

G

H

J

K

L

M

N

O

P

Q

R

S

T

U

Millimeter

Min.

Max.

31.50

7.80

31.88

8.20

4.09

4.09

4.29

4.29

4.09

14.91

4.29

15.11

30.12

38.00

30.30

38.23

11.68

8.92

12.22

9.60

0.76

12.60

0.84

12.85

25.15

1.98

25.42

2.13

4.95

26.54

5.97

26.90

3.94

4.72

4.42

4.85

24.59

-0.05

25.07

0.1

Inches

Min.

Max.

1.240

0.307

1.255

0.323

0.161

0.161

0.169

0.169

0.161

0.587

0.169

0.595

1.186

1.496

1.193

1.505

0.460

0.351

0.481

0.378

0.030

0.496

0.033

0.506

0.990

0.078

1.001

0.084

0.195

1.045

0.235

1.059

0.155

0.186

0.174

0.191

0.968

-0.002

0.987

0.004

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

2-4

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