Outlines ISOPLUS220
E
A A2
12 3
2x b2
3x b
2x e
c
A1
W
DSEC16-06AC
E1
b4
Millimeters
Dim.
min max
A 4.00 5.00
A1 2.50 3.00
A2 1.60 1.80
b 0.90 1.30
b2 2.35 2.55
b4 1.25 1.65
c 0.70 1.00
D 15.00 16.00
D1 12.00 13.00
D2 1.10 1.50
D3 14.90 15.50
E 10.00 11.00
E1 7.50 8.50
e
2.54 BSC
L 13.00 14.50
L1 3.00 3.50
T° 42.5 47.5
W
-
0.1
Inches
min max
0.157 0.197
0.098 0.118
0.063 0.071
0.035 0.051
0.093 0.100
0.049 0.065
0.028 0.039
0.591 0.630
0.472 0.512
0.043 0.059
0.587 0.610
0.394 0.433
0.295 0.335
0.100 BSC
0.512 0.571
0.118 0.138
-
0.004
Die konvexe Form des Substrates ist typ. < 0.04 mm über der
Kunststoffoberfläche der Bauteilunterseite
The convex bow of substrate is typ. < 0.04 mm over plastic
surface level of device bottom side
Die Gehäuseabmessungen entsprechen dem Typ TO-273
gemäß JEDEC außer D und D1.
This drawing will meet all dimensions requiarement of JEDEC
outline TO-273 except D and D1.
1
2
3
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20120705b