HGTG20N60B3(2003) 查看數據表（PDF） - Fairchild Semiconductor
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| HGTG20N60B3 Datasheet PDF : 0 Pages | |||
HGTG20N60B3
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector to Gate Voltage, RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TC = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
HGTG20N60B3
600
600
40
20
160
±20
±30
30A at 600V
165
1.32
-40 to 150
300
260
4
10
UNITS
V
V
A
A
A
V
V
W
W/oC
oC
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE = 360V, TC = 125oC, RG = 25Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Thermal Resistance
NOTE:
BVCES
BVECS
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
VGEP
QG(ON)
td(ON)I
trI
td(OFF)I
tfI
EON
EOFF
RθJC
IC = 250µA, VGE = 0V
IC = -10mA, VGE = 0V
VCE = BVCES
IC = IC110, VGE = 15V
TC = 25oC
TC = 150oC
TC = 25oC
TC = 150oC
IC = 250µA, VCE = VGE
VGE = ±20V
TC = 150oC, VGE = 15V,
RG = 10Ω, L = 45µH
VCE = 480V
VCE = 600V
IC = IC110, VCE = 0.5 BVCES
IC = IC110,
VCE = 0.5 BVCES
TC = 150oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 10Ω
L = 100µH
VGE = 15V
VGE = 20V
600
-
-
V
20
-
-
V
-
-
250
µA
-
-
1.0
mA
-
1.8
2.0
V
-
2.1
2.5
V
3.0
5.0
6.0
V
-
-
±100
nA
100
-
-
A
30
-
-
A
-
8.0
-
V
-
80
105
nC
-
105
135
nC
-
25
-
ns
-
20
-
ns
-
220
275
ns
-
140
175
ns
-
475
-
µJ
-
1050
-
µJ
-
-
0.76 oC/W
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). The HGTG20N60B3 was tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
diode losses.
©2003 Fairchild Semiconductor Corporation
HGTG20N60B3 Rev.B2
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