MJ11012(2001) 查看數據表（PDF） - ON Semiconductor
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MJ11012 Datasheet PDF : 4 Pages
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ON Semiconductort
High-Current Complementary
Silicon Transistors
PNP
MJ11015
NPN
MJ11012
. . . for use as output devices in complementary general purpose
amplifier applications.
MJ11016 *
• High DC Current Gain —
hFE = 1000 (Min) @ IC – 20 Adc
• Monolithic Construction with Built–in Base Emitter Shunt
*ON Semiconductor Preferred Device
Resistor
• Junction Temperature to +200_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation @TC = 25_C
Derate above 25_C @ TC = 100_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
MJ11012
MJ11015
MJ11016
60
120
60
120
5
30
1
200
1.15
–55 to +200
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case
RθJC
0.87
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Maximum Lead Temperature for
TL
275
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Soldering Purposes for v 10 Seconds.
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
_C
30 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60–120 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
PNP
MJ11015
COLLECTOR
NPN
MJ11012
MJ11016
COLLECTOR
BASE
BASE
≈ 8.0 k ≈ 40
≈ 8.0 k ≈ 40
EMITTER
Figure 1. Darlington Circuit Schematic
EMITTER
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
May, 2001 – Rev. 4
Publication Order Number:
MJ11012/D
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