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MJ11033G(2005) 查看數據表(PDF) - ON Semiconductor

零件编号
产品描述 (功能)
生产厂家
MJ11033G
(Rev.:2005)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MJ11033G Datasheet PDF : 4 Pages
1 2 3 4
ORDERING INFORMATION
MJ11028
Device
MJ11028G
MJ11029
MJ11029G
MJ11030
MJ11030G
MJ11032
MJ11032G
MJ11033
MJ11033G
MJ11028, MJ11030, MJ11032 (NPN)
Package
TO−204
TO−204
(Pb−Free)
TO−204
TO−204
(Pb−Free)
TO−204
TO−204
(Pb−Free)
TO−204
TO−204
(Pb−Free)
TO−204
TO−204
(Pb−Free)
Shipping
100 Units / Tray
100
50
20
10
5
2
1
0.5
0.2
0.1
0.2
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
SECOND BREAKDOWN LIMITED
MJ11028, 29
MJ11032, 33
0.5 1 2
5 10 20 50 100 200
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 2. DC Safe Operating Area
There are two limitations on the power−handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
100 k
50 k
20 k
VCE = 5 V
TJ = 25°C
5
MJ11029, MJ11033 PNP
MJ11028, MJ11030, MJ11032 NPN
4
10 k
5k
3
TJ = 25°C
IC/IB = 100
2k
1k
MJ11029, MJ11033 PNP
MJ11028, MJ11030, MJ11032 NPN
2
500
1
200
100
1
2
80 ms
(PULSED)
0
VCE(sat)
5
10
20
50
100
1
23
5
VBE(sat)
10
20
80 ms
(PULSED)
50
100
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 3. DC Current Gain
Figure 4. “On” Voltage
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