MJ3040 查看數據表（PDF） - Inchange Semiconductor

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MJ3040

Silicon NPN Darlingtion Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlingtion Power Transistor

isc Product Specification

MJ3040

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC=2.5A; IB=50mA

VCE(sat)-2 Collector-Emitter Saturation Voltage IC=5A; IB=400mA

VBE(on) Base-Emitter On voltage

ICBO

Collector Cutoff current

IEBO

Emitter Cut-off current

IC=2.5A ; VCE=5V

VCE=400V; IE= 0

VCE=400V; IE= 0, TC=100℃

VEB= 5V; IC= 0

hFE-1

DC Current Gain

IC=2.5A ; VCE=5V

hFE-2

DC Current Gain

IC=5A ; VCE=5V

MIN MAX UNIT

300

V

2.2

V

2.5

V

2.5

V

1.0

5.0

mA

40

mA

100

25

isc Website：www.iscsemi.cn

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