MJD243T4 查看數據表（PDF） - Motorola => Freescale

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MJD243T4

NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS

Motorola => Freescale 

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

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by MJD243/D

Plastic Power Transistor

DPAK For Surface Mount Applications

. . . designed for low voltage, low–power, high–gain audio amplifier applications.

• Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc

• High DC Current Gain — hFE = 40 (Min) @ IC = 200 mAdc

= 15 (Min) @ IC = 1.0 Adc

• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

• Straight Lead Version in Plastic Sleeves (“–1” Suffix)

• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

• Low Collector–Emitter Saturation Voltage —

VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ = 0.6 Vdc (Max) @ IC = 1.0 Adc

• High Current–Gain — Bandwidth Product — fT = 40 MHz (Min) @ IC = 100 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ • Annular Construction for Low Leakage — ICBO = 100 nAdc @ Rated VCB

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating

Symbol

Value

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage

Collector Current — Continuous

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Peak

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation @ TC = 25_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation @ TA = 25_C*

Derate above 25_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range

VCB

VCEO

VEB

IC

IB

PD

PD

TJ, Tstg

100

100

7

4

8

1

12.5

0.1

1.4

0.011

– 65 to + 150

Vdc

Vdc

Vdc

Adc

Adc

Watts

W/_C

Watts

W/_C

_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Junction to Ambient*

RθJC

RθJA

10

_C/W

89.3

* When surface mounted on minimum pad sizes recommended.

TA TC

2.5 25

2 20

1.5 15

1 10

0.5 5

TA (SURFACE MOUNT)

TC

00

25

50

75

100

125

150

T, TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data

MJD243*

*Motorola Preferred Device

NPN SILICON

POWER TRANSISTOR

4 AMPERES

100 VOLTS

12.5 WATTS

CASE 369A–13

CASE 369–07

MINIMUM PAD SIZES

RECOMMENDED FOR

SURFACE MOUNTED

APPLICATIONS

inches

mm

1

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