MJD31CT4-A 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

生产厂家

MJD31CT4-A

Low voltage NPN power transistor

STMicroelectronics 

MJD31CT4-A

2

Electrical characteristics

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Table 2. Electrical characteristics

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

ICES

Collector cut-off current

(VBE = 0)

ICEO

Collector cut-off current

(IB = 0)

IEBO

Emitter cut-off current

(IC = 0)

VCEO(sus) (1)

Collector-emitter

sustaining voltage

(IB = 0)

VCE(sat) (1) Collector-emitter

saturation voltage

VCE = 100V

VCB = 60V

VEB = 5V

IC =30mA

IC = 3A _

100

IB = 375mA

20 µA

50 µA

0.1 mA

V

1.2 V

VBE(on) (1) Base-emitter on voltage IC = 3A _ VCE= 4V

hFE

DC current gain

IC = 1A _ _ VCE =4V

25

IC = 3A

VCE =4V

10

1.8 V

50

Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5%

2.1

Electrical characteristic (curves)

Figure 1. Safe operating area

Figure 2. Derating curve

3/9

Share Link: