MJE13003-X-T60-F-K 查看數據表（PDF） - Unisonic Technologies
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MJE13003-X-T60-F-K Datasheet PDF : 7 Pages
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MJE13003
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCEO(SUS)
400
V
Collector-Emitter Voltage
VCEO
700
V
Emitter Base Voltage
VEBO
9
V
Collector Current
Continuous
IC
1.5
A
Peak (1)
ICM
3
Base Current
Continuous
IB
0.75
A
Peak (1)
IBM
1.5
Emitter Current
Continuous
IE
2.25
A
Peak (1)
IEM
4.5
Total Power Dissipation (TC=25℃)
PD
40
W
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-40 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
OFF CHARACTERISTICS (Note)
Collector-Emitter Sustaining Voltage VCEO(SUS) IC=10 mA , IB=0
400
Collector Cutoff Current
ICEO
VCEO=Rated Value,
VBE(OFF)=1.5 V
TC=25°C
TC=100℃
1
5
Emitter Cutoff Current
IEBO VEB=9 V, IC=0
1
SECOND BREAKDOWN
Second Breakdown Collector Current
Is/b
with bass forward biased
See Figure 5
Clamped Inductive SOA with base
reverse biased
RBSOA
See Figure 6
ON CHARACTERISTICS (Note)
DC Current Gain
hFE1
hFE2
IC=0.5A, VCE=10V
IC=1A, VCE=2V
8
40
5
25
IC=0.5A, IB=0.1A
0.5
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=1A, IB=0.25A
IC=1.5A, IB=0.5A
1
3
IC=1A, IB=0.25A, TC=100℃
1
IC=0.5A, IB=0.1A
1
Base-Emitter Saturation Voltage
VBE(SAT) IC=1A, IB=0.25A
1.2
IC=1A, IB=0.25A, TC=100℃
1.1
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
fT
IC=100mA, VCE=10V, f=1MHz
4 10
Output Capacitance
Cob VCB=10V, IE=0, f=0.1MHz
21
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
tD
0.05 0.1
Rise Time
Storage Time
tR
VCC=125V, IC=1A, IB1=IB2=0.2A,
tS
tP=25μs, Duty Cycle≤1%
0.5 1
2
4
Fall Time
tFALL
0.4 0.7
Inductive Load, Clamped (Table 1)
Storage Time
tSV
Crossover Time
tC
Fall Time
tFALL
Note: Pulse Test : PW=300μs, Duty Cycle≤2%
IC=1A, Vclamp=300V, IB1=0.2A,
VBE(OFF)=5Vdc, TC=100℃
1.7 4
0.29 0.75
0.15
UNIT
V
mA
mA
V
V
MHz
pF
μs
μs
μs
μs
μs
μs
μs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R204-004,E
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