MJE13003-X-T60-F-K 查看數據表（PDF） - Unisonic Technologies
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MJE13003-X-T60-F-K Datasheet PDF : 7 Pages
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MJE13003
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL PERFORMANCE CHARACTERISTICS
DC Current Gain
80
60
TJ=150℃
40
30
25℃
20
-55℃
1
0
8
6
VCE=2V
- - - - - -VCE=5V
4
0.02 0.03 0.05 0.07 0.1
0.2 0.3 0.5 0.7 1
2
Collector Current,IC (A)
Collector Saturation Region
2
TJ=25℃
1.6
1.2
Ic=0.1A 0.3A 0.5A 1A 1.5A
0.8
0.4
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2
0.5 1 2
Base Current, IB (A)
Base-Emitter Voltage
1.4
VBE(SAT) @ IC/IB=3
1.2
- - - - - -VBE(ON) @ VCE=2V
1
TJ=-55℃
25℃
0.8
25℃
0.6
150℃
0.4
0.02 0.03 0.05 0.07 0.1
0.2 0.3 0.5 0.7 1
2
Collector Current,IC (A)
Collector-Emitter Saturation Region
0.35
0.3
0.25
Ic/IB=3
0.2
0.15
TJ=-55℃
25℃
0.1
150℃
0.05
0
0.02 0.03 0.05 0.07 0.1
0.2 0.3 0.5 0.7 1
2
Collector Current, IC (A)
Collector cut-off Region
4
10
VCE=250V
3
10
TJ=150℃
2
10
125℃
100℃
1
10
75℃
50℃
0
10
25℃
-1
REVERSE
10
-0.4
-0.2
0
FORWARD
+0.2
+0.4
+0.6
Base-Emitter Voltage, VBE (V)
Capacitance
500
300
200
Cib
TJ=25℃
100
70
50
30
20
10
7
5
0.1 0.2 0.5
12 5
Cob
10 20 50 100 200 500 1000
Reverse Voltage, VR (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 7
QW-R204-004,E
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