MJD44H11 查看數據表（PDF） - STMicroelectronics

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MJD44H11

Complementary power transistors

STMicroelectronics 

MJD44H11T4-A, MJD45H11T4-A

2

Electrical characteristics

Electrical characteristics

Note:

Tcase = 25 °C; unless otherwise specified.

Table 4. Electrical characteristics

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

VCEO(sus)(1)

Collector-emitter

sustaining voltage (IB = 0)

IC = 30 mA

80

-

Collector cut-off current

ICES

(VBE = 0)

VCE = 80 V

-

Emitter cut-off current

IEBO

(IC = 0)

VEB = 5 V

-

VCE(sat)(1)

Collector-emitter saturation

voltage

IC = 8 A

IB = 0.4 A

-

V

10 µA

50 µA

1

V

VBE(sat)(1)

Base-emitter saturation

voltage

IC = 8 A

IB = 0.8 A

-

1.5 V

hFE(1)

DC current gain

IC = 2 A_

VCE = 1 V 60

-

IC = 4 A_ _ VCE = 1 V 40

-

1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.

For PNP types voltage and current values are negative.

2.1

Typical characteristic (curves)

Figure 2. Safe operating area

Figure 3. Derating curves

Doc ID 16095 Rev 1

3/8

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