MJE344G(2013) 查看數據表（PDF） - ON Semiconductor
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MJE344G Datasheet PDF : 3 Pages
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MJE344G
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0)
Collector Cutoff Current (VCE = 200 Vdc, IB = 0)
Collector Cutoff Current (VCB = 200 Vdc, IE = 0)
Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)
VCEO(sus)
200
ICEO
−
ICBO
−
IEBO
−
−
Vdc
1.0
mAdc
0.1
mAdc
0.1
mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc)
Collector−Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc)
Base−Emitter On Voltage (IC = 50 mAdc, VCE = 10 Vdc)
hFE
30
VCE(sat)
−
VBE(on)
−
300
−
1.0
Vdc
1.0
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 50 mAdc, VCE = 25 Vdc, f = 10 MHz)
fT
15
−
MHz
Output Capacitance (VCB = 20 Vdc, IE = 0, f = 100 kHz)
Cob
−
15
pF
Small−Signal Current Gain (IC = 50 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
25
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1.0
0.5
0.2 TJ = 150°C
500 ms
1.0 ms ALL
ALL
0.1
dc
0.05
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
0.02
THERMAL LIMIT TC = 25°C
0.01
10
20 30 40 60
100
200 300
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
≤ 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less then
the limitations imposed by second breakdown.
300
200
TJ = +150°C
100
+100°C
70
+ 25°C
50
30
- 55°C
20
VCE = 2.0 V
VCE = 10 V
10
1.0 2.0 3.0 5.0 7.0 10 20
50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 10 V
0.4
0.2
0
10
VCE(sat) @ IC/IB = 10
IC/IB = 5.0
TJ = + 25°C
20 30
50
100
200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
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