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MMDJ-65609EV-40MQ 查看數據表(PDF) - Atmel Corporation
零件编号
产品描述 (功能)
生产厂家
MMDJ-65609EV-40MQ
Rad. Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM
Atmel Corporation
MMDJ-65609EV-40MQ Datasheet PDF : 14 Pages
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Write Cycle 3. CS1 or CS2
Controlled
(1)
Note:
1. The internal write time of the memory is defined by the overlap of CS1 LOW and CS2 HIGH and W LOW. Both signals must
be activated to initiate a write and either signal can terminate a write by going in activated. The data input setup and hold
timing should be referenced to the actived edge of the signal that terminates the write. Data out is high impedance if OE =
V
IH
.
10
M65609E
4158D–AERO–06/02
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