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CT30SM-12 Datasheet PDF : 3 Pages
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MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30SM-12
GENERAL INVERTER • UPS USE
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Parameter
Test conditions
V (BR) CES
IGES
ICES
VGE(th)
VCE(sat)
Cies
Coes
Cres
td (on)
tr
td (off)
tf
Rth (j-c)
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Thermal resistance
IC = 1mA, VGE = 0V
VGE = ±30V, VCE = 0V
VCE = 600V, VGE = 0V
IC = 3.0mA, VCE = 10V
IC = 30A, VGE = 15V
VCE = 25V, VGE = 0V, f = 1MHz
VCC = 300V, Resistance load,
IC = 30A, VGE = 15V, RGE = 20Ω
Junction to case
Limits
Unit
Min.
Typ. Max.
600
—
—
V
—
—
±0.5 µA
—
—
1
mA
4.5
6.0
7.5
V
—
2.5
3.0
V
—
1480
—
pF
—
180
—
pF
—
54
—
pF
—
30
—
ns
—
135
—
ns
—
135
—
ns
—
250
—
ns
—
—
0.50 °C/W
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
50 VGE = 20V 15V
12V
Tj = 25°C
40
11V
30
10V
20
9V
10
8V
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
4
IC = 60A
30A
2
10A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
Feb.1999
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