MMBF4391LT1G 查看數據表（PDF） - ON Semiconductor
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MMBF4391LT1G Datasheet PDF : 6 Pages
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MMBF4391LT1G,
SMMBF4391LT1G,
MMBF4392LT1G,
MMBF4393LT1G
JFET Switching Transistors
N−Channel
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Drain−Source Voltage
VDS
30
Vdc
Drain−Gate Voltage
VDG
30
Vdc
Gate−Source Voltage
VGS
30
Vdc
Forward Gate Current
IG(f)
50
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Derate above 25°C
Symbol
PD
Max
225
1.8
Unit
mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
556
°C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
http://onsemi.com
3
1
2
SOT−23
CASE 318
STYLE 10
2 SOURCE
3
GATE
1 DRAIN
MARKING DIAGRAM
XXX M G
G
1
XXX = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MARKING & ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
1
May, 2012 − Rev. 10
Publication Order Number:
MMBF4391LT1/D
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