MMBFJ309LT1G(2009) 查看數據表（PDF） - ON Semiconductor
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MMBFJ309LT1G Datasheet PDF : 5 Pages
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MMBFJ309LT1G, MMBFJ310LT1G
30
3.0
24 VDS = 10 V
ID = 10 mA
TA = 25°C
18
2.4
Y11
1.8
12
Y21
1.2
Y22
6.0
0.6
Y12
0
100
200 300
500 700 1000
f, FREQUENCY (MHz)
Figure 4. Common−Gate Y Parameter
Magnitude versus Frequency
|S21|, |S11|
0.85 0.45
|S12|, |S22|
0.060 1.00
0.79 0.39
0.73 0.33
0.67 0.27
VDS = 10 V
ID = 10 mA
TA = 25°C
S22
S21
0.048 0.98
0.036 0.96
0.024 0.94
0.61 0.21
S11
0.012 0.92
0.55 0.15
100
S12
0.90
200 300
500 700 1000
f, FREQUENCY (MHz)
Figure 5. Common−Gate S Parameter
Magnitude versus Frequency
q21, q11
180° 50°
170° 40°
160° 30°
150° 20°
140° 10°
130° 0°
100
q12, q22
- 20° 87°
q22
- 20°
- 40° 86°
q21
- 60°
- 80° 85°
- 100°
q12
- 120° 84°
q11
VDS = 10 V
ID = 10 mA
TA = 25°C
- 140°
- 160° 83°
- 180°
200 300
- 200° 82°
500 700 1000
f, FREQUENCY (MHz)
Figure 6. Common−Gate Y Parameter
Phase−Angle versus Frequency
q11, q12
- 20° 120°
q11
- 40° 100° q21
q22
- 60° 80°
q21, q22
0
- 20°
- 40°
- 80° 60°
q12
- 100° 40°
- 120° 20°
100
q21 - 60°
VDS = 10 V
ID = 10 mA
q11
TA = 25°C
200 300 500 700
f, FREQUENCY (MHz)
- 80°
- 100°
1000
Figure 7. S Parameter Phase−Angle
versus Frequency
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