PN100 查看數據表（PDF） - Fairchild Semiconductor

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PN100

NPN General Purpose Amplifier

Fairchild Semiconductor 

Thermal Characteristics TA=25°C unless otherwise noted

Symbol

Parameter

PD

Total Device Dissipation

Derate above 25°C

RθJC

Thermal Resistance, Junction to Case

RθJA

Thermal Resistance, Junction to Ambient

* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06."

Max.

PN100

PN100A

*MMBT100

*MMBT100A

625

350

5.0

2.8

83.3

200

357

Units

mW

mW/°C

°C/W

°C/W

©2002 Fairchild Semiconductor Corporation

Rev. B, November 2002

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