FGH20N6S2 查看數據表（PDF） - Fairchild Semiconductor
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FGH20N6S2 Datasheet PDF : 9 Pages
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Typical Performance Curves (Continued)
120
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
100
80
TJ = 25oC
60
40
20 TJ = 125oC
TJ = -55oC
0
4
6
8
10
12
14
16
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 13. Transfer Characteristic
0.8
RG = 25Ω, L = 500µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
0.6
ICE = 14A
0.4
ICE = 7A
0.2
ICE = 3A
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
Figure 15. Total Switching Loss vs Case
Temperature
1.2
FREQUENCY = 1MHz
1.0
0.8
0.6
CIES
0.4
0.2
COES
CRES
0.0
0 10 20 30 40 50 60 70 80 90 100
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 17. Capacitance vs Collector to Emitter
Voltage
16
IG(REF) = 1mA, RL = 42.6Ω, TJ = 25oC
14
12
VCE = 600V
10
8
6
VCE = 400V
4
VCE = 200V
2
0
0
5
10
15
20
25
30
35
QG, GATE CHARGE (nC)
Figure 14. Gate Charge
10
TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
1
ICE = 14A
ICE = 7A
ICE = 3A
0.1
0.05
1
10
100
1000
RG, GATE RESISTANCE (Ω)
Figure 16. Total Switching Loss vs Gate
Resistance
3.6
DUTY CYCLE < 0.5%
3.4
PULSE DURATION = 250µs, TJ = 25oC
3.2
ICE = 14A
3.0
2.8
ICE = 7A
2.6
ICE = 3A
2.4
2.2
2.0
5 6 7 8 9 10 11 12 13 14 15 16
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
©2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
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