MMBD330 查看數據表（PDF） - Shenzhen Luguang Electronic Technology Co., Ltd

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MMBD330

Schottky Barrier Diodes

Shenzhen Luguang Electronic Technology Co., Ltd 

MMBD330/MMBD770

Schottky Barrier Diodes

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Reverse Breakdown voltage

MMBD330

MMBD770

Reverse current MMBD330

MMBD770

Forward voltage MMBD330

MMBD770

Symbol

V(BR)R

IR

VF

Diode capacitance MMBD330

MMBD770

CD

Test conditions MIN

30

IR=100μA

70

VR=25V

VR=35V

IF=1.0mA

IF=10mA

IF=1.0mA

IF=10mA

VR=15V,f=1MHz

VR=20V,f=1MHz

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

MAX UNIT

V

200

nA

200

0.45

0.60

V

0.50

1.0

0.9

pF

0.5

http://www.luguang.cn

mail:lge@luguang.cn

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