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HGTG20N60A4 Datasheet PDF : 8 Pages
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HGTG20N60A4, HGTP20N60A4
Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
SYMBOL
td(ON)I
trI
td(OFF)I
tfI
EON1
TEST CONDITIONS
IGBT and Diode at TJ = 125oC
ICE = 20A
VCE = 390V
VGE = 15V
RG = 3Ω
L = 500µH
Test Circuit (Figure 20)
MIN
TYP
MAX UNITS
-
15
21
ns
-
13
18
ns
-
105
135
ns
-
55
73
ns
-
115
-
µJ
Turn-On Energy (Note 3)
EON2
-
510
600
µJ
Turn-Off Energy (Note 2)
Thermal Resistance Junction To Case
EOFF
RθJC
-
330
500
µJ
-
-
0.43
oC/W
NOTES:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 20.
Typical Performance Curves Unless Otherwise Specified
100
DIE CAPABILITY
VGE = 15V
80
PACKAGE LIMIT
60
40
20
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
500
TC VGE
75oC 15V
300
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
100 fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.43oC/W, SEE NOTES
TJ = 125oC, RG = 3Ω, L = 500µH, VCE = 390V
40
5
10
20
30
40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
120 TJ = 150oC, RG = 3Ω, VGE = 15V, L = 100µH
100
80
60
40
20
0
0
100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
14
VCE = 390V, RG = 3Ω, TJ = 125oC
450
12
400
ISC
10
350
8
300
6
250
4
tSC
200
2
150
0
100
10
11
12
13
14
15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2001 Fairchild Semiconductor Corporation
HGTG20N60A4, HGTP20N60A4 Rev. B
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