HGTG20N60A4 查看數據表（PDF） - Fairchild Semiconductor
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HGTG20N60A4 Datasheet PDF : 8 Pages
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HGTG20N60A4, HGTP20N60A4
Typical Performance Curves Unless Otherwise Specified (Continued)
5
FREQUENCY = 1MHz
4
2.2
DUTY CYCLE < 0.5%, TJ = 25oC
PULSE DURATION = 250µs,
2.1
3
CIES
2
2.0
ICE = 30A
1.9
ICE = 20A
1
COES
CRES
0
0
20
40
60
80
100
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
1.8
ICE = 10A
1.7
8
9
10 11 12 13 14 15 16
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
100
0.5
0.2
10-1 0.1
0.05
0.02
0.01
10-2
SINGLE PULSE
10-5
10-4
10-3
10-2
t1, RECTANGULAR PULSE DURATION (s)
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-1
100
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
HGTG20N60A4D
DIODE TA49372
RG = 3Ω
L = 500µH
DUT
+
-
VDD = 390V
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
90%
VGE
VCE
EOFF
10%
EON2
90%
ICE
10%
td(OFF)I tfI
trI
td(ON)I
FIGURE 21. SWITCHING TEST WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTG20N60A4, HGTP20N60A4 Rev. B
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