MMBT3904LP 查看數據表（PDF） - Diodes Incorporated.
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MMBT3904LP Datasheet PDF : 7 Pages
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MMBT3904LP
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 9)
DC Current Gain
Symbol Min
BVCBO
60
BVCEO
40
BVEBO
6.0
ICEX
IBL
40
70
hFE
100
60
30
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
VBE(sat)
0.65
Cobo
Cibo
hie
1.0
hre
0.5
hfe
100
hoe
1.0
Current Gain-Bandwidth Product
fT
300
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
td
tr
ts
tf
Note:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Max
50
50
300
0.20
0.30
0.85
0.95
4.0
8.5
10
8.0
400
40
35
35
200
50
Unit
Test Condition
V IC = 10µA, IE = 0
V IC = 1.0mA, IB = 0
V IE = 10µA, IC = 0
nA VCE = 30V, VEB(OFF) = 3.0V
nA VCE = 30V, VEB(OFF) = 3.0V
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
V IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
V IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
pF
pF
kΩ
x 10-4
µS
MHz
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
VCE = 20V, IC = 10mA,
f = 100MHz
ns VCC = 3.0V, IC = 10mA,
ns VBE(off) = - 0.5V, IB1 = 1.0mA
ns VCC = 3.0V, IC = 10mA,
ns IB1 = IB2 = 1.0mA
MMBT3904LP
Document number: DS31835 Rev. 5 - 2
4 of 7
www.diodes.com
May 2015
© Diodes Incorporated
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