MMBT3904RFG 查看數據表（PDF） - TSC Corporation

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MMBT3904RFG

300mW, NPN Small Signal Transistor

TSC Corporation 

Small Signal Product

RATINGS AND CHARACTERISTICS CURVES

(TA=25°C unless otherwise noted)

Fig.1 Typical Pulsed Current Gain

VS. Collector Current

500

400

125 °C

VCE = 5V

300

25 °C

200

100

- 40 °C

0

0.1

1.0

10.0

IC - Collector Current (mA)

100.0

Fig. 3 Base-Emitter Saturation Voltage

VS. Collector Current

1.1

1

β = 10

0.9

0.8

0.7

- 40 °C

0.6

25 °C

0.5

0.4

125 °C

0.3

0.1

1

10

100

IC - Collector Current (mA)

1000

100

Fig. 5 Collector-Cutoff Current

VS. Ambient Temperature

VCB= 30V

10

1

0.1

0.01

25

50

75

100

125

150

TA - Ambient Temperature (OC)

MMBT3904

Taiwan Semiconductor

0.20

0.15

0.10

0.05

0.00 0

Fig. 2 Collector-Emitter Saturation Voltage

VS. Collector Current

β = 10

125 °C

25 °C

- 40 °C

1

10

100

IC - Collector Current (mA)

Fig. 4 Base-Emitter On Voltage

VS. Collector Current

1

VCE= 5V

0.8

- 40 °C

0.6

25 °C

0.4

0.2

0.1

10

125 °C

1

10

100

IC - Collector Current (mA)

Fig. 6 Capacitance VS.

Reverse Bias Voltage

f = 1.0 MHz

1

0.1

C ibo

Cobo

1

10

100

Reverse Bias Voltage (V)

Document Number: DS_S1412034

Version: D14

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