MMBT3904W 查看數據表（PDF） - Secos Corporation.
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MMBT3904W Datasheet PDF : 6 Pages
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Elektronische Bauelemente
MMBT3904W
NPN Silicon
General Purpose Transistor
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS(3)
DC Current Gain (1)
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector – Emitter Saturation Voltage (3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base – Emitter Saturation Voltage (3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
HFE
40
70
100
60
30
VCE(sat)
—
—
VBE(sat)
0.65
—
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
fT
300
Cobo
—
Cibo
—
hie
1.0
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Small – Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
hre
0.5
hfe
100
hoe
1.0
NF
—
Delay Time
Rise Time
(VCC = 3.0 Vdc, VBE = – 0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)
td
—
tr
—
Storage Time
(VCC = 3.0 Vdc,
ts
—
Fall Time
IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)
tf
—
v v 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Max
Unit
—
—
—
300
—
—
Vdc
0.2
0.3
Vdc
0.85
0.95
—
MHz
4.0
pF
8.0
pF
10
k ohms
8.0
X 10– 4
400
—
40
mmhos
5.0
dB
35
ns
35
200
ns
50
http://www.SeCoSGmbH.com
01-Jun-2007 Rev. B
Any changing of specification will not be informed individual
Page 2 of 6
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