MMBT918LT1 查看數據表（PDF） - Leshan Radio Company,Ltd
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MMBT918LT1 Datasheet PDF : 2 Pages
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LESHAN RADIO COMPANY, LTD.
VHF / UFH Transistor
NPN Silicon
MMBT918LT1
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V CEO
V CBO
V EBO
IC
Value
15
30
3.0
50
3
COLLECTOR
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
–55 to +150
°C/W
°C
DEVICE MARKING
MMBT9181LT1 = M3B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 3.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C = 1.0 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
Collector Cutoff Current
( V CB = 15 Vdc, I E = 0)
V (BR)CEO
15
V (BR)CBO
30
V (BR)EBO
3.0
I CBO
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max
Unit
—
Vdc
—
Vdc
—
Vdc
50
nAdc
O2–1/2
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