MMBT6520LT3G(2010) 查看數據表（PDF） - ON Semiconductor
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MMBT6520LT3G Datasheet PDF : 5 Pages
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MMBT6520LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −1.0 mA)
Collector−Base Breakdown Voltage
(IC = −100 mA)
Emitter−Base Breakdown Voltage
(IE = −10 mA)
Collector Cutoff Current
(VCB = −250 V)
Emitter Cutoff Current
(VEB = −4.0 V)
ON CHARACTERISTICS
DC Current Gain
(IC = −1.0 mA, VCE = −10 V)
(IC = −10 mA, VCE = −10 V)
(IC = −30 mA, VCE = −10 V)
(IC = −50 mA, VCE = −10 V)
(IC = −100 mA, VCE = −10 V)
Collector−Emitter Saturation Voltage
(IC = −10 mA, IB = −1.0 mA)
(IC = −20 mA, IB = −2.0 mA)
(IC = −30 mA, IB = −3.0 mA)
(IC = −50 mA, IB = −5.0 mA)
Base−Emitter Saturation Voltage
(IC = −10 mA, IB = −1.0 mA)
(IC = −20 mA, IB = −2.0 mA)
(IC = −30 mA, IB = −3.0 mA)
Base−Emitter On Voltage
(IC = −100 mA, VCE = −10 V)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mA, VCE = −20 V, f = 20 MHz)
Collector−Base Capacitance
(VCB= −20 V, f = 1.0 MHz)
Emitter−Base Capacitance
(VEB= −0.5 V, f = 1.0 MHz)
Symbol
Min
Max
V(BR)CEO
−350
−
V(BR)CBO
−350
−
V(BR)EBO
−5.0
−
ICBO
−
−50
IEBO
−
−50
Unit
Vdc
Vdc
Vdc
nA
nA
hFE
VCE(sat)
VBE(sat)
VBE(on)
−
20
−
30
−
30
200
20
200
15
−
Vdc
−
−0.30
−
−0.35
−
−0.50
−
−1.0
Vdc
−
−0.75
−
−0.85
−
−0.90
−
−2.0
Vdc
fT
40
200
MHz
Ccb
−
6.0
pF
Ceb
−
100
pF
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