MMBT6520LT1G(2010) 查看數據表（PDF） - ON Semiconductor

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MMBT6520LT1G
(Rev.:2010)

High Voltage Transistor PNP Silicon

ON Semiconductor 

MMBT6520LT1G

10 k

7.0 k

5.0 k

3.0 k

2.0 k

1.0 k

700

500

300

200

100

1.0

1

ts

0.1

VCE(off) = 100 V

tf

IC/IB = 5.0

IB1 = IB2

TJ = 25°C

0.01

1.0 s

10 ms

2.0 3.0 5.0 7.0 10

20 30

IC, COLLECTOR CURRENT (mA)

Figure 7. Turn−Off Time

0.001

50 70 100

1

10

100

VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 8. Safe Operating Area

1000

1.0

0.7

0.5 D = 0.5

0.2

0.3

0.2

0.1 0.05

SINGLE PULSE

0.1

0.07

SINGLE PULSE

0.05

0.03

ZqJC(t) = r(t) • RqJC

0.02

ZqJA(t) = r(t) • RqJA

0.01

0.1 0.2

0.5 1.0 2.0

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

RqJC(t) = r(t) RqJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) RqJC(t)

5.0 10 20

50 100 200

t, TIME (ms)

Figure 9. Thermal Response

500 1.0 k 2.0 k

5.0 k 10 k

+VCC

+10.8 V

-9.2 V

PULSE WIDTH ≈ 100 ms

tr, tf ≤ 5.0 ns

DUTY CYCLE ≤ 1.0%

FOR PNP TEST CIRCUIT,

REVERSE ALL VOLTAGE POLARITIES

VCC ADJUSTED

FOR VCE(off) = 100 V

1.0 k

2.2 k

20 k

1/2MSD7000

50 W SAMPLING SCOPE

50

APPROXIMATELY

-1.35 V

(ADJUST FOR V(BE)off = 2.0 V)

Figure 10. Switching Time Test Circuit

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