MMBT5089 查看數據表（PDF） - Unisonic Technologies
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MMBT5089 Datasheet PDF : 7 Pages
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MMBT5088/MMBT5089
TYPICAL CHARACTERISTICS
1200
1000
Typical Pulsed Current Gain
vs Collector Current
125 C
VCE=5.0V
800
600
25 C
400
-40 C
200
0
0.01 0.03 0.1 0.3 1 3 10
Collector Current, IC (mA)
30 100
NPN SILICON TRANSISTOR
Collector-Emitter Saturation
0.3
Voltage vs. Collector Current
0.25
β=10
0.2
0.15
125 C
0.1
25 C
0.05
-40 C
0.1
1
10
100
Collector Current, IC (mA)
Collector-Cutoff Current
10
vs Ambient Temperature
VCB=45V
1
-0.1
25
50 75 100 125 150
Ambient Temperature, TA (℃)
UNISONIC TECHNOLOGIES CO., Ltd
www.unisonic.com.tw
Input and Output Capacitance vs
5
Reverse Bias Voltage
f=1.0MHz
4
3
Cte
2
1
Cob
0
0
4
8
12 16
20
Reverse Bias Voltage (V)
4 of 7
QW-R206-033.C
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