MMBZ6V8ALT1 查看數據表（PDF） - ON Semiconductor
零件编号
产品描述 (功能)
生产厂家
MMBZ6V8ALT1 Datasheet PDF : 8 Pages
| |||
MMBZ5V6ALT1 Series
TYPICAL CHARACTERISTICS
tr ≤ 10 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
100
50% OF IPP.
PEAK VALUE − IPP
IPP
HALF VALUE − 2
50
tP
0
0
100
1
2
3
4
t, TIME (ms)
Figure 5. Pulse Waveform
MMBZ5V6ALT1
RECTANGULAR
WAVEFORM, TA = 25°C
BIDIRECTIONAL
100
90
80
70
60
50
40
30
20
10
0
0
100
25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Figure 6. Pulse Derating Curve
MMBZ5V6ALT1
RECTANGULAR
WAVEFORM, TA = 25°C
BIDIRECTIONAL
10
UNIDIRECTIONAL
10
UNIDIRECTIONAL
1
0.1
1
10
100
PW, PULSE WIDTH (ms)
1000
Figure 7. Maximum Non−repetitive Surge
Power, Ppk versus PW
Power is defined as VRSM x IZ(pk) where VRSM is
the clamping voltage at IZ(pk).
1
0.1
1
10
100
PW, PULSE WIDTH (ms)
1000
Figure 8. Maximum Non−repetitive Surge
Power, Ppk(NOM) versus PW
Power is defined as VZ(NOM) x IZ(pk) where
VZ(NOM) is the nominal Zener voltage measured at
the low test current used for voltage classification.
http://onsemi.com
5
Share Link: 