MMBZ27VCL 查看數據表（PDF） - NXP Semiconductors.
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MMBZ27VCL Datasheet PDF : 15 Pages
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NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per diode
PPPM
IPPM
rated peak pulse power
rated peak pulse current
MMBZ12VDL
MMBZ12VDL/DG
tp = 10/1000 µs
tp = 10/1000 µs
[1][2] -
[1][2]
-
MMBZ15VDL
-
MMBZ15VDL/DG
MMBZ18VCL
-
MMBZ18VCL/DG
MMBZ20VCL
-
MMBZ20VCL/DG
MMBZ27VCL
-
MMBZ27VCL/DG
MMBZ33VCL
-
MMBZ33VCL/DG
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
[3] -
[4] -
Tj
junction temperature
-
Tamb
ambient temperature
−55
Tstg
storage temperature
−65
Max Unit
40
W
2.35 A
1.9
A
1.6
A
1.4
A
1
A
0.87 A
350
mW
440
mW
150
°C
+150 °C
+150 °C
[1] In accordance with IEC 61643-321 (10/1000 µs current waveform).
[2] Measured from pin 1 or 2 to pin 3.
[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
Table 7. ESD maximum ratings
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
VESD
electrostatic discharge voltage
Conditions
IEC 61000-4-2
(contact discharge)
machine model
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 or 2 to pin 3.
Min Max Unit
[1][2]
-
-
30 kV
2
kV
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
Rev. 01 — 3 September 2008
© NXP B.V. 2008. All rights reserved.
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