MMBZ27VCL 查看數據表（PDF） - NXP Semiconductors.

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MMBZ27VCL

Double ESD protection diodes for transient overvoltage suppression

NXP Semiconductors. 

NXP Semiconductors

MMBZxVCL; MMBZxVDL series

Double ESD protection diodes for transient overvoltage suppression

100

Cd

(pF)

80

006aab328

60

40

20

0

0

(1)

(2)

(3)

(4)

5

10

15

20

25

VR (V)

f = 1 MHz; Tamb = 25 °C

(1) MMBZ15VDL: unidirectional

(2) MMBZ15VDL: bidirectional

(3) MMBZ27VCL: unidirectional

(4) MMBZ27VCL: bidirectional

Fig 5. Diode capacitance as a function of reverse

voltage; typical values

I

102

IRM

(nA)

10

006aab329

1

10−1

10−2

10−3

−75

−25

25

75

MMBZ27VCL: VRWM = 22 V

125

175

Tamb (°C)

Fig 6. Reverse leakage current as a function of

junction temperature; typical values

IPPM

IPP

−VCL −VBR −VRWM

V

−IRM

−IR

−+

P-N

−IPP

−IPPM

006aab324

Fig 7. V-I characteristics for a unidirectional

ESD protection diode

−VCL −VBR −VRWM

IR

IRM

−IRM

−IR

VRWM VBR VCL

−

+

−IPP

−IPPM

006aab325

Fig 8. V-I characteristics for a bidirectional

ESD protection diode

MMBZXVCL_MMBZXVDL_SER_1

Product data sheet

Rev. 01 — 3 September 2008

© NXP B.V. 2008. All rights reserved.

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