MMDF3N06HD 查看數據表（PDF） - Motorola => Freescale

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MMDF3N06HD

TMOS Dual N-Channel Field Effect Transistors

Motorola => Freescale 

PACKAGE DIMENSIONS

MMDF3N06HD

–A–

J

8

5

–B–

1

4

M_

G

–T–

8X D

SEATING

PLANE

0.25 (0.010) M T B S A S

CASE 751–05

SO–8

ISSUE P

NOTES:

1. DIMENSIONS A AND B ARE DATUMS AND T IS A

DATUM SURFACE.

2. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

3. DIMENSIONS ARE IN MILLIMETER.

4. DIMENSION A AND B DO NOT INCLUDE MOLD

PROTRUSION.

5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.

6. DIMENSION D DOES NOT INCLUDE MOLD

PROTRUSION. ALLOWABLE DAMBAR

PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS

OF THE D DIMENSION AT MAXIMUM MATERIAL

CONDITION.

MILLIMETERS

DIM MIN MAX

A 4.80 5.00

B 3.80 4.00

C 1.35 1.75

D 0.35 0.49

F 0.40 1.25

G

1.27 BSC

J 0.18 0.25

K 0.10 0.25

M 0_ 7_

P 5.80 6.20

R 0.25 0.50

STYLE 11:

PIN 1. SOURCE 1

2. GATE 1

3. SOURCE 2

4. GATE 2

5. DRAIN 2

6. DRAIN 2

7. DRAIN 1

8. DRAIN 1

Motorola TMOS Power MOSFET Transistor Device Data

9

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