MMDF3N03HD 查看數據表（PDF） - ON Semiconductor
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MMDF3N03HD Datasheet PDF : 10 Pages
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MMDF3N03HD
1000
VDD = 15 V
ID = 3 A
VGS = 10 V
TJ = 25°C
100
3.0 TJ = 25°C
VGS = 0 V
2.5
2.0
td(off)
tr
10
tf
td(on)
1
1
10
100
RG, GATE RESISTANCE (OHMS)
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
1.5
1.0
0.5
0
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 11. Diode Forward Voltage
versus Current
100
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
10 μs
100 μs
1 ms
10 ms
1
dc
RDS(on) LIMIT
0.1
THERMAL LIMIT
PACKAGE LIMIT
Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″
thick single sided) with one die operating, 10s max.
0.01
0.1
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
350
ID = 9 A
300
250
200
150
100
50
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
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