HGTG30N60B3 查看數據表（PDF） - Fairchild Semiconductor
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HGTG30N60B3 Datasheet PDF : 8 Pages
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HGTG30N60B3
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
td(ON)I
trI
td(OFF)I
tfI
EON1
IGBT and Diode at TJ = 150oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG= 3Ω
L = 1mH
Test Circuit (Figure 17)
-
32
-
ns
-
24
-
ns
-
275
320
ns
-
90
150
ns
-
500
-
µJ
Turn-On Energy (Note 4)
EON2
-
1300 1550
µJ
Turn-Off Energy (Note 3)
Thermal Resistance Junction To Case
EOFF
RθJC
-
1600 1900
µJ
-
-
0.6
oC/W
NOTES:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 17.
Typical Performance Curves Unless Otherwise Specified
60
VGE = 15V
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
TJ = 150oC, RG = 3Ω, L = 1mH,
100
VCE = 480V
10
1
fMAX1 = 0.05 / (td(OFF)I + td(ON)I) TC
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
75oC
75oC
110oC
VGE
15V
10V
15V
(DUTY FACTOR = 50%)
RØJC = 0.6oC/W, SEE NOTES
110oC 10V
0.1
5
10
20
40
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
225 TJ = 150oC, RG = 3Ω, VGE = 15V, L =100µH
200
175
150
125
100
75
50
25
0
0
100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
20
500
VCE = 360V, RG = 3Ω, TJ = 125oC
18
450
16
400
ISC
14
350
12
300
10
250
tSC
8
200
6
150
10
11
12
13
14
15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2004 Fairchild Semiconductor Corporation
HGTG30N60B3 Rev. B3
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