MMDT5551 查看數據表（PDF） - Micro Commercial Components
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MMDT5551 Datasheet PDF : 4 Pages
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MCC
R
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
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Features
• Halogen free available upon request by adding suffix "-HF"
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Capable of 200mWatts of Power Dissipation
· Ideal for Medium Power Amplification and Switching
x Operating and Storage Junction Temperatures: -55ć to 150ć
• Marking:K4N
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min
Max Units
V(BR)CEO
V(BR)CBO
V(BR)EBO
IEBO
ICBO
IC
RqJA
Collector-Emitter Breakdown Voltage
(IC=1 mAdc, IB=0)
160
Collector-Base Breakdown Voltage
(IC=100µA, IE=0)
180
Emitter-Base Breakdown Voltage
(IE=10µAdc, IC=0)
6.0
Emitter Cutoff Current
(VEB=4Vdc, IC=0)
Collect Cutoff Current
(VCB=120Vdc, IE=0)
Collector Current-Continuous
Thermal Resistance, Junction to Ambient
Vdc
Vdc
Vdc
50
nAdc
50
nAdc
200
mA
625 K/W
ON CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
DC Current Gain
(IC=1mAdc, VCE=5.0Vdc)
(IC=10mAdc, VCE=5.0Vdc)
Collector-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
Base-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
SMALL-SIGNAL CHARACTERISTICS
fT
Cobo
Noise figure
Current Gain-Bandwidth Product
(IC=10mAdc, VCE=20Vdc, f=100MHz)
Output Capacitance
(VCB=5.0Vdec, IE=0, f=1.0MHz)
Rg=1kohm
VCE=5.0Vdec, IC=200uA, f=1.0KHz
80
100
300
0.15 Vdc
1.0
Vdc
100 300
6.0
8.0
MHz
pF
NF
MMDT5551
Plastic-Encapsulate
Transistors
SOT-363
G
B
C
A
H
K
DIM
A
B
C
D
G
H
J
K
L
M
M
J
D
DIMENSIONS
INCHES
MAX
.006
.014
.045
.053
.085
.096
.026
.047
.055
.071
.087
---
.004
.035
.043
.010
.018
.003
.006
MM
MIN
MAX
0.15
0.35
1.15
1.35
2.15
2.45
0.65Nominal
1.20
1.40
1.80
2.20
---
0.10
0.90
1.10
0.26
0.46
0.08
0.15
L
NOTE
SUGGESTED SOLDER
PAD LAYOUT
Revision: D
www.mccsemi.com
1 of 4
2018/03/02
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