GLT4160L04-50TC 查看數據表（PDF） - G-Link Technology
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GLT4160L04-50TC Datasheet PDF : 22 Pages
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G-LINK
GLT4160L04
4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Nov 2001 (Rev.3.2)
AC Characteristics
TA =0°C to 70°C , -20°C to 85°C VCC = 3.3 V ± 0.3V, VIH/VIL = 3/0 V, VOH/VOL = 2/0.8V
An initial pause of 200 µs and 8 CAS -before- RAS or RAS -only refresh cycles are required after power-up.
40
50
60
70
Parameter
Symbol Min. Max. Min. Max. Min. Max. Min. Max. Unit Notes
Read or Write Cycle Time
Read Modify Write Cycle Time
RAS Precharge Time
RAS Pulse Width
Access Time from RAS
Access Time from CAS
Access Time from Column Address
CAS to Output Low-Z
CAS to Output High-Z
RAS Hold Time
CAS Hold Time
CAS Pulse Width
RAS to CAS Delay Time
RAS to Column Address Delay Time
CAS to RAS Precharge Time
Row Address Set-Up Time
Row Address Hold Time
Column Address Set-Up Time
Column Address Hold Time
Column Address to RAS Lead Time
Column Address Hold Time Referenced to RAS
Read Command Set-Up Time
Read Command Hold Time Referenced to CAS
Read Command Hold Time Referenced to RAS
Write Command Set-Up Time
Write Command Hold Time
Write Command Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
tRC
tRWC
tRP
tRAS
tRAC
tCAC
tAA
tCLZ
tCEZ
tRSH
tCSH
tCAS
tRCD
tRAD
tCRP
tASR
tRAH
tASC
tCAH
tRAL
tAR
tRCS
tRCH
tRRH
tWCS
tWCH
tWP
tRWL
tCWL
70
84
104
124
ns
91
116
140
170
ns
25
30
40
50
ns
40 10K 50 10k 60 10k 70 10k ns
40
50
60
70 ns 1,2,3
12
13
15
20 ns 1,5,7
20
25
30
35 ns 1,5,6
3
3
3
3
ns
3 8 3 13 3 15 3 20 ns
12
13
15
20
ns
34
38
45
50
ns
7 10k 8 10k 10 10k 15 10k ns
18 28 20 37 20 45 20 50 ns
13 20 15 25 15 30 15 35 ns 7
5
5
5
5
ns
0
0
0
0
ns
8
10
10
10
ns
0
0
0
0
ns
6
8
10
15
ns
20
25
30
35
ns
34
40
45
50
ns
0
0
0
0
ns
0
0
0
0
ns 4
0
0
0
0
ns 4
0
0
0
0
ns 8,9
6
10
10
15
ns
6
10
10
15
ns
12
13
15
30
ns
8
8
10
15
ns
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-6-
G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E. RD, IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
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