MJ4030 查看數據表（PDF） - Comset Semiconductors
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MJ4030 Datasheet PDF : 3 Pages
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PNP MJ4030 – MJ4031 – MJ4032
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
VCEO
Collector-Emitter
Voltage (*)
MJ4030 -60 -
IC=-100 mA, IB=0 MJ4031 -80 -
MJ4032 -100
VCE=-30 Vdc, IB=0 MJ4030 -
-
ICEO
Collector Cutoff Current
VCE=-40 Vdc, IB=0 MJ4031 -
-
VCE=-50 V, IB=0 MJ4032 -
-
MJ4030
IEBO
Emitter Cutoff Current
VBE=-5.0 V, IC=0 MJ4031 -
-
MJ4032
ICER
VCE(SAT)
Collector-Emitter Leakage
Current
Collector-Emitter saturation
Voltage (*)
VCB=-60 V
RBE=1.0 kΩ
VCB=-80 V
RBE=1.0 kΩ
VCB=-100 V
RBE=1.0 kΩ
VCB=-60 V
RBE=1.0 kΩ
TC=150°C
VCB=-80 V
RBE=1.0 kΩ
TC=150°C
VCB=-100 V
RBE=1.0 kΩ
TC=150°C
IC=-10 A
IB=-40 mA
IC=-16 A
IB=-80 mA
MJ4030 -
-
MJ4031 -
-
MJ4032
MJ4030 -
-
MJ4031 -
-
MJ4032
MJ4030
MJ4031 -
-
MJ4032
MJ4030
MJ4031 -
-
MJ4032
VBE
Base-Emitter Voltage (*)
IC=-10 A
VCE=-3.0V
MJ4030
MJ4031 -
-
MJ4032
hFE
DC Current Gain (*)
VCE=-10 V
IC=-3.0 A
MJ4030
MJ4031 1000 -
MJ4032
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
-
-
V
-3.0 mA
-5.0 mA
-1.0
mA
-5.0
-2.5
V
-4.0
-3 V
-
-
29/10/2012
COMSET SEMICONDUCTORS
2|3
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