HIP0061AS1 查看數據表（PDF） - Intersil

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HIP0061AS1

60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array

Intersil 

HIP0061

PSPICE Model Listing

Device Model Netlist for the HIP0061 Power MOSFET Array

*Rev: 6/12/95

.SUBCKT HIP0061 1 2 3 4 5 6 7

X1 8 1 11 4 HIP0061_1

LS1 2 8 7.5n

X2 9 3 11 4 HIP0061_1

LS2 5 9 7.5n

X3 10 6 11 4 HIP0061_1

LS3 7 10 7.5n

LS4 4 11 7.5n

.ENDS

.SUBCKT HIP0061_1 3 2 11 9

MOS1 4 2 1 1 NMOS1

JFET 13 1 4 J1

D1 5 6 D1

DBODY 1 13 D2

DBREAK 3 7 D3

DSUB 9 13 D4

DESD1 2 12 D5

DESD2 15 12 D5

VBREAK 7 1 DC 90

C21 2 1 750P

C23 2 13 45P

C24 2 4 1100P

RDRAIN 13 14 9.0e-02

LDRAIN 14 3 7.5n

RSOURCE 1 15 17.5e-03

LSOURCE 15 11 7.5n

FDSCHRG 4 2 VMEAS 1.0

E41 5 15 4 1 1.0

VPINCH 6 8 DC 10.0

VMEAS 8 15 DC 0.0

.MODEL NMOS1 NMOS LEVEL=3 (VTO=2.75 TOX=5e-08

KP=3.150e-03 PHI=0.65 GAMMA=2.55

+ VMAX=6.42e+07 NSUB=4.33e+16 THETA=0.60973

ETA=0.0015 KAPPA=1.275

+ L=1u W=3050u)

.MODEL J1 NJF (VTO=-15.0 BETA=10.736

LAMBDA=1.15e-02 PB=0.5848 IS=+1.0e-13

+ RD=3.53e-02 ALPHA=0.2)

.MODEL D1 D (IS=1.0e-15 N=0.03 RS=1.0)

.MODEL D2 D (IS=3.0e-13 RS=2.5e-03 TT=20N

CJO=350e-12)

.MODEL D3 D (IS=1.0e-13 N=1.0 RS=2.0)

.MODEL D4 D (IS=1.0e-13 RS=2.0e-03 CJO=80e-12)

.MODEL D5 D (IS=1.0e-15 RS=1.0e-03 CJO=2.5e-12)

.ENDS

NOTE: For further discussion of the PSPICE PowerFET macromodel consult Spicing-Up SPICE II Software for Power MOSFET Modeling,

Harris Application Note AN8610.

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