MPF102(2001) 查看數據表（PDF） - ON Semiconductor
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MPF102 Datasheet PDF : 8 Pages
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ON Semiconductort
JFET VHF Amplifier
N–Channel – Depletion
MPF102
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VDG
VGS
IG
PD
TJ
Tstg
Value
25
25
–25
10
350
2.8
125
–65 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
°C
1
2
3
CASE 29–11, STYLE 5
TO–92 (TO–226AA)
1 DRAIN
3
GATE
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = –10 µAdc, VDS = 0)
Gate Reverse Current
(VGS = –15 Vdc, VDS = 0)
(VGS = –15 Vdc, VDS = 0, TA = 100°C)
Gate–Source Cutoff Voltage
(VDS = 15 Vdc, ID = 2.0 nAdc)
Gate–Source Voltage
(VDS = 15 Vdc, ID = 0.2 mAdc)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(1)
(VDS = 15 Vdc, VGS = 0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance(1)
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
Input Admittance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
Output Conductance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
1. Pulse Test; Pulse Width v 630 ms, Duty Cycle v 10%.
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 2
2 SOURCE
Symbol
Min
Max
Unit
V(BR)GSS
–25
IGSS
–
–
VGS(off)
–
VGS
–0.5
–
Vdc
–2.0
nAdc
–2.0
µAdc
–8.0
Vdc
–7.5
Vdc
IDSS
2.0
20
mAdc
yfs
Re(yis)
Re(yos)
Ciss
Crss
2000
1600
–
–
–
–
7500
–
800
200
7.0
3.0
mmhos
mmhos
mmhos
pF
pF
Publication Order Number:
MPF102/D
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