MPSA18 查看數據表（PDF） - ON Semiconductor
零件编号
产品描述 (功能)
生产厂家
MPSA18 Datasheet PDF : 5 Pages
| |||
MPSA18
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
45
−
Vdc
−
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
45
−
Vdc
−
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
6.5
−
Vdc
−
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
nAdc
−
1.0
50
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
hFE
−
400
580
−
500
850
−
500
1100
−
500
1150 1500
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
Vdc
−
−
0.2
−
0.08
0.3
Base −Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
VBE(on)
Vdc
−
0.6
0.7
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
MHz
100
160
−
Collector−Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
pF
−
1.7
3.0
Emitter−Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
pF
−
5.6
6.5
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 10 kW, f = 1.0 kHz)
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 100 Hz)
NF
dB
−
0.5
1.5
−
4.0
−
Equivalent Short Circuit Noise Voltage
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 100 Hz)
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
VT
−
6.5
−
nVńǸHz
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
http://onsemi.com
2
Share Link: 